Morphological and Structural Changes in III-V and II-VI Semiconductors and Related Systems Caused by Post-growth Treatments

Литвин, Оксана Степанівна (2001) Morphological and Structural Changes in III-V and II-VI Semiconductors and Related Systems Caused by Post-growth Treatments PhD thesis, Інститут фізики напівпровідників ім. В.Є. Лашкарьова НАН України.

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Abstract

Relations between surface nanomorphology of polycrystalline thin films used in semiconductor device structures and their crystalline structure, level of mechanical strains in film-substrate structures as well as processes of structure ordering in interface at high temperature treatments were investigated using improved complex of X-ray diffraction and Atomic Force Microscopy methods. Correlation of morphological and structural charac-teristics of polycrystalline ZnS:Cu films with conditions of fabrication and post-growth treatments were determined. The structure perfection and thermoresistance of metal-GaAs systems with TiB2 аntidiffusion layers were investigated. The obtained results develop notions about the character and origin of structure irregularities in multilayer structures and structural relaxation processes stimulated by external influences. The results could be used in technology of microelectronic and optoelectronic devices for improvement of their parameters and efficiency.

Item Type: Thesis (PhD)
Uncontrolled Keywords: Polycrystalline thin films; ZnS:Cu; metal-GaAs contacts; X-ray; AFM; thermal annealing
Subjects: Abstracts > Спецради у інших ВНЗ
Divisions: Institutes > Institute of Society > Chair of Information Technologies and Mathematics > Chair of Computer Science
Depositing User: Оксана Степанівна Литвин
Date Deposited: 24 Sep 2013 07:23
Last Modified: 11 Apr 2018 07:15
URI: http://elibrary.kubg.edu.ua/id/eprint/2121

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