Role of mechanical stresses at ion implantation of CdHgTe solid solutions

Smirnov, A.B. and Lytvyn, O.S. and Morozhenko, V.A. and Savkina, R.K. and Smoliy, M.I. and Udovytska, R.S. and Sizov, F.F. (2013) Role of mechanical stresses at ion implantation of CdHgTe solid solutions Український фізичний журнал , 58 (9). pp. 872-880. ISSN 2071-0186

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Abstract

The properties of n-CdxHg1xTe/CdZnTe (x 0.223) structures implanted with B+ and Ag+ ions with an energy of 100 keV to a dose of 3 1013 cm2 are studied. The software package TRIM 2008 was applied to simulate the ion implantation process. The surface morphology of heterostructures and their optical, mechanical and electrical properties are studied. It is found that the ion irradiation of specimens gives rise to the formation of a characteristic relief on their surface, as well as a layer in the near-surface region, where the optical parameters differ from those in the matrix. The implantation of CdxHg1xTe epitaxial layers with boron and silver ions with the same energy and to the same dose brings about the formation of a damaged layer, substantially non-uniform by the thickness and the damage character, with maximum mechanical stresses that differ by two orders of magnitude. The values of the crystal lattice contraction coefficient and the mechanical stresses max in the region of radiation-induced disordering in the solid solution are determined. The influence of mechanical stresses in the doped layer on the defect redistribution and the formation of properties of Cd0:223Hg0:777Te after the implantation is discussed

Item Type: Article
Uncontrolled Keywords: Ion implantation; nanostructuring; semiconductor structure
Subjects: Articles in journals > Фахові (входять до переліку фахових, затверджений МОН)
Divisions: Institutes > Institute of Society > Chair of Information Technologies and Mathematics > Chair of Computer Science
Depositing User: Оксана Степанівна Литвин
Date Deposited: 24 Sep 2013 07:51
Last Modified: 22 Apr 2016 07:22
URI: http://elibrary.kubg.edu.ua/id/eprint/2122

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