Interference photolithography using photoetching effect In chalcogenide films

Dan’ko, V.A. and Indutny , I.Z. and Myn’ko, V.I. and Shepeliavyi, P.E. and Lykanyuk, M.V. and Lytvyn, O.S. (2012) Interference photolithography using photoetching effect In chalcogenide films Journal of Non-Oxide Glasses, 3 (2). pp. 13-18. ISSN 2605-6874

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Abstract

The surface roughness of thin amorphous films of chalcogenide glasses (ChG) after photostimulated dissolution in amine-based selective etchant has been investigated. It is established that the rms roughness of the annealed and photoetched ChG film substantially smaller than the as-evaporated film and etched in the same selective etchant. This makes it possible to obtain more higher-quality lithographic masks or periodic relief-phase structures using new photoetching effect: photo-induced enhancement in solubility of annealed ChG layers. A possible mechanism for the photoinduced etching of ChGs is discussed. The diffraction gratings on germanium ChG - more environmentally acceptable compounds than traditionally used arsenic chalcogenides, were recorded for the first time by using the effect of hotoinduced etching on ChG layers and their characteristics were studied

Item Type: Article
Uncontrolled Keywords: chalcogenide glasses; photo-induced enhancement; diffraction gratings; atomic force microscopy
Subjects: Articles in journals > Інші (не входять ні до фахових, ні до наукометричних баз)
Divisions: Institutes > Institute of Society > Chair of Information Technologies and Mathematics > Chair of Computer Science
Depositing User: Оксана Степанівна Литвин
Date Deposited: 26 Sep 2013 12:55
Last Modified: 25 Nov 2015 08:48
URI: http://elibrary.kubg.edu.ua/id/eprint/2226

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