Transformation of the SiC/por-SiC/TiO2 structure during the rapid thermal annealing

Конакова, Р.В. and Коломис, А.Ф. and Литвин, Оксана Степанівна and Охрименко, О.Б. and Стрельчук, В.В. and Светличный , А.В. and Линец, Л.Г. (2012) Transformation of the SiC/por-SiC/TiO2 structure during the rapid thermal annealing Физика и техника полупроводников, 46 (9). pp. 1244-1247. ISSN 0015-3222

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Abstract

The investigation of surface morphology, Raman scattering and photoluminescence of the SiC/por-SiC/TiO2 structures before and after rapid thermal annealing was conducted. It is shown that rapid thermal annealing leads to appearance in the Raman spectra of the SiC/por-SiC/TiO2 structures the bands those are characteristic for the carbon compounds. Analysis of the photoluminescence spectra excited by radiation with energies lower than the 6H-SiC band gap shows that the appearance of photoluminescence in porous silicon carbide is due to the impurity states, which are formed on the surface by the products of chemical reactions during etching

Item Type: Article
Uncontrolled Keywords: silicon carbide; rapid thermal annealing; surface morphology; photoluminescence; Raman scattering
Subjects: Articles in journals > Наукові (входять до інших наукометричних баз, крім перерахованих, мають ISSN, DOI, індекс цитування)
Divisions: Institutes > Institute of Society > Chair of Information Technologies and Mathematics > Chair of Computer Science
Depositing User: Оксана Степанівна Литвин
Date Deposited: 26 Sep 2013 13:36
Last Modified: 25 Nov 2015 08:54
URI: http://elibrary.kubg.edu.ua/id/eprint/2227

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