Simple method for SiC nanowires fabrication

Kiselov, V.S. and Lytvyn, O.S. and Yukhymchuk, V.O. and Belyaev, A.E. (2011) Simple method for SiC nanowires fabrication Semiconductor Physics, Quantum Electronics & Optoelectronics, 14 (1). pp. 7-11. ISSN 1605-6582 (On-line)

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Abstract

In this work, we introduce a simple and convenient approach for growing SiC nanowires (SiCNWs) directly on carbon source from graphite. The commercial SiO powder and the cheap common graphite were used as the source materials. SiCNWs have been synthesized during holding time less than 60-80 min at 1450-1500 C by using a simple and low-cost method in an industrial furnace with a resistant heater.

Item Type: Article
Uncontrolled Keywords: silicon carbide; nanowires; vapor-solid mechanism; large-scale production
Subjects: Articles in journals > Наукові (входять до інших наукометричних баз, крім перерахованих, мають ISSN, DOI, індекс цитування)
Divisions: Institutes > Institute of Society > Chair of Information Technologies and Mathematics > Chair of Computer Science
Depositing User: Оксана Степанівна Литвин
Date Deposited: 30 Sep 2013 14:00
Last Modified: 20 Nov 2015 13:29
URI: http://elibrary.kubg.edu.ua/id/eprint/2239

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