Surface morphology and electrical properties of hybrid structures fabricated on the basis of layered semiconductor with nanoscale ferroelectric inclusions Au/Ni/<C>/n-Ga2O3/p-GaSe<KNO3>

Бахтинов, А.П. and Водопьянов, В.Н. and Нетяга, В.В. and Кудринский, З.Р. and Литвин, Оксана Степанівна (2012) Surface morphology and electrical properties of hybrid structures fabricated on the basis of layered semiconductor with nanoscale ferroelectric inclusions Au/Ni/<C>/n-Ga2O3/p-GaSe<KNO3> Физика и техника полупроводников, 46 (3). pp. 356-368. ISSN 0015-3222

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Abstract

Composite ”layered semiconductor−ferroelectric“ nanostructures (p-GaSe<KNO3>) have been investigated using atomic force microscopy. The current−voltage characteristics and the dependence of the impedance spectra on the bias voltage of hybrid structures were investigated at room temperature. We found that the current−voltage curve shows a resonant peak followed by a negative differential resistance slope. The current reaches a maximum at certain applied voltage due to effect of electric polarization switching in nanoscale 3D ferroelectric inclusions in the layered GaSe matrix. At high freguencies (f > 10 6 Hz) we

Item Type: Article
Uncontrolled Keywords: layered semiconductor; ferroelectric; nanoscale inclusions; current-voltage characteristic; atomic force microscopy
Subjects: Articles in journals > Наукові (входять до інших наукометричних баз, крім перерахованих, мають ISSN, DOI, індекс цитування)
Divisions: Institutes > Institute of Society > Chair of Information Technologies and Mathematics > Chair of Computer Science
Depositing User: Оксана Степанівна Литвин
Date Deposited: 11 Oct 2013 07:17
Last Modified: 25 Nov 2015 08:53
URI: http://elibrary.kubg.edu.ua/id/eprint/2377

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