Comparison of properties inherent to thin titanium oxide films formed by rapid thermal annealing on SiC and porous SiC substrates

Bacherikov, Yu.Yu and Dmitruk, N.L. and Konakova, R.V. and Kolomys, O.F. and Okhrimenko, O.B. and Strelchuk, V.V. and Lytvyn, O.S. and Kapitanchuk, L.M. and Svetlichnyi, A.M. (2018) Comparison of properties inherent to thin titanium oxide films formed by rapid thermal annealing on SiC and porous SiC substrates Semiconductor Physics, Quantum Electronics & Optoelectronics, 21 (2). pp. 200-205. ISSN 1560-8034

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Abstract

The comparative analysis of optical characteristics inherent to TiO2/SiC and TiO2/por-SiC/SiC structures has been performed. It has been shown that, in these structures regardless of the substrate structure, formation of TiO2 layers with approximately the same width 60 nm takes place. In this case the TiO2 film composition is close to the stoichiometric one. At the same time, the presence of an additional porous layer in the TiO2/por-SiC/SiC structure leads to blurring the oxide film – substrate interface but promotes an increase in the intensity of the Raman scattering signal from the oxide film.

Item Type: Article
Uncontrolled Keywords: thin titanium oxide films; SiC substrates; interface; porous layer
Subjects: Статті у наукометричних базах > Web of Science
Articles in journals > Фахові (входять до переліку фахових, затверджений МОН)
Divisions: Факультети > Факультет інформаційних технологій та управління > Кафедра комп'ютерних наук і математики
Depositing User: Оксана Степанівна Литвин
Date Deposited: 03 Sep 2018 09:07
Last Modified: 15 Jan 2019 10:10
URI: http://elibrary.kubg.edu.ua/id/eprint/24181

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