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Applied Nanoscience

, Volume 9, Issue 5, pp 623–630 | Cite as

Preparation, structural and luminescent properties of nanocrystalline ZnO films doped Ag by close space sublimation method

  • Viktoriya KhomchenkoEmail author
  • Mikhail Mazin
  • Mykola Sopinskyy
  • Oksana Lytvyn
  • Viktor Dan’ko
  • Yurii Piryatinskii
  • Pavlo Demydiuk
Original Article
First Online:

Abstract

The simple way for silver doping of ZnO films is presented. The ZnO films were prepared by reactive rf-magnetron sputtering on silicon and sapphire substrates. Ag doping is carried out by sublimation of the Ag source located at close space at atmospheric pressure in air. Then the ZnO and ZnO–Ag films were annealed in wet media. The microstructure and optical properties of the films were compared and studied by atomic force microscopy (AFM), X-ray diffraction (XRD), photoluminescence (PL) and cathodoluminescence (CL). XRD results indicated that all the ZnO films have a polycrystalline hexagonal structure and a preferred orientation with the c-axis perpendicular to the substrate. The annealing and Ag doping promote increasing grain’s sizes and modification of grain size distribution. The effect of substrate temperature, substrate type, Ag doping and post-growth annealing of the films was studied by PL spectroscopy. The effect of Ag doping was obvious and identical for all the films, namely the wide visible bands of PL spectra are suppressed by Ag doping. The intensity of ultraviolet band increased 15 times as compared to their reference films on sapphire substrate. The ultraviolet/visible emission ratio was 20. The full width at half maximum (FWHM) for a 380 nm band was 14 nm, which is comparable with that of epitaxial ZnO. The data implies the high quality of ZnO–Ag films. Possible mechanisms to enhance UV emission are discussed.

Keywords

Thin films ZnO Ag Close space sublimation Photoluminescence Cathodoluminescence 
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Notes

Acknowledgements

The authors thank the National Academy of Sciences of Ukraine for their financial support. The work was partially financed within the program of National Academy of Sciences of Ukraine “Nanosystems, nanomaterials, nanotechnologies” (project no. 85/07-N). It is a pleasure to express our gratitude to Prof. George Lashkarev and Dr.Vitaliy Karpyna for helpful discussions. The authors would also like to thank Lenny Monastyrsky for his help with the English edition of this article.

References

  1. Ahn BD, Kang HS, Kim JS, Kim GH, Chang HW, Lee SJ (2006) Synthesis and analysis of Ag-doped ZnO. J Appl Phys 100:093701.  https://doi.org/10.1063/1.2364041 CrossRefGoogle Scholar
  2. Baca R, Juárez G, Solache H, Andraca J, Martinez J, Esparza A, Kryshtab T, Peña R (2010) Luminescence and structural properties of ZnO thin films annealing in air. IOP Conf Ser Mater Sci Eng 8:012041–012048.  https://doi.org/10.1088/1757-899X/8/1/012041 CrossRefGoogle Scholar
  3. Baxter JB, Aydil ES (2005) Epitaxial growth of ZnO nanowires on a- and c-plane sapphire. J Cryst Growth 27:407–411.  https://doi.org/10.1016/j.jcrysgro.2004.10.014 CrossRefGoogle Scholar
  4. Chai J, Mendelsberg RJ, Reeves RJ, Kennedy J, von Wenckstern H, Schmidt M, Grundmann M, Doyle K, Myers TH, Durbin SM (2010) Identification of a deep acceptor level in ZnO due to silver doping. J Electron Mater 39:577–583.  https://doi.org/10.1007/s11664-009-1025-7 CrossRefGoogle Scholar
  5. Chen X, Ng AMC, Djurisic AB, Ling CC, Chan WK (2012) Hydrothermal treatment of ZnO nanostructures. Thin Solid Films 520:2656–2662.  https://doi.org/10.1016/j.tsf.2011.11.019 CrossRefGoogle Scholar
  6. Duan L, Lin B, Zhang W, Zhong S, Zhuxi F (2006) Enhancement of ultraviolet emissions from ZnO films by Ag doping. Appl Phys Lett 88:232110-1–23210-3.  https://doi.org/10.1063/1.2211053 Google Scholar
  7. Evtushenko A, Karpyna V, Lashkarev G, Lazorenko V, Baturin V, Karpenko A, Lunika M, Dan’ko A (2008) Multilayered ZnO films of improved quality deposited by magnetron sputtering. Acta Phys Pol A 114:1131–1137.  https://doi.org/10.12693/APhysPolA.114.1131 CrossRefGoogle Scholar
  8. Fan J, Freer K (2006) The roles played by Ag and Al dopants in controlling the electrical-properties of ZnO varistors. J Appl Phys 77:4795–4800.  https://doi.org/10.1063/1.359398 CrossRefGoogle Scholar
  9. Gruzintsev AN, Volkov VT, Khodos II, Nikiforova TV, Koval’chuk MN (2002) Luminescent properties of ZnO films doped with group-IB acceptors. Russian Microelectronics 31:200–205.  https://doi.org/10.1023/A:1015467204997 CrossRefGoogle Scholar
  10. Gruzintsev AN, Volkov VT, Yakimov EE (2003) Photoelectric properties of ZnO films doped with acceptor impurities Cu and Ag. Semiconductors 37:259–262.  https://doi.org/10.1134/1.1561514 CrossRefGoogle Scholar
  11. Hotra ZY (1986) The handbook on technology of microelectronic devices. Kamenyar, Lviv (in Ukrainien).Google Scholar
  12. Ibach H (2006) Physics of surfaces and interface. Springer, New YorkGoogle Scholar
  13. Janotti, Van de Walle CG (2007) Native point defects in ZnO. Phys Rev B 76:165202-1–165202-22.  https://doi.org/10.1103/PhysRevB.76.165202 CrossRefGoogle Scholar
  14. Khomchenko VS, Rodionov VE, Tzyrkunov YuA, Berezhinsky LI (1998) New method of thin films doping. In: Proceedings of the 7th international symposium “advanced display technologies”, Minsk, Belarusia, pp 218–220Google Scholar
  15. Khomchenko VS, Kryshtab TG, Savin AK, Zavyalova LV, Roshchina NN, Rodionov VE, Lytvyn OS, Kushnirenko VI, Khachatryan VB, Andraca-Adame JA (2007) Fabrication and properties of ZnO:Cu and ZnO:Ag thin films. Superlattices Microstruct 42:94–98.  https://doi.org/10.1016/j.spmi.2007.04.016 CrossRefGoogle Scholar
  16. Khomchenko VS, Mazin MA, Sopinskyy MV, Lytvyn OS, Dan’ko VA, Piryatinskii YP, Demydiuk PV (2017) Preparation, structural and luminescent properties of nanocrystalline ZnO films doped Ag by close space sublimation method. In: Abstract book of International research and practice conference “Nanotechnology and nanomaterials” (NANO-2017). August 23–26, 2017, Chernivtsi, p. 388Google Scholar
  17. Ko K-H, Joung Y-H, Choi WS, Park M, Lee J, Hwang H-S (2012) Structural and optical properties of a radio frequency magnetron-sputtered ZnO thin film with different growth angles. Nanoscale Res Lett 7:55.  https://doi.org/10.1186/1556-276X-7-55 CrossRefGoogle Scholar
  18. Kryshtab TG, Khomchenko VS, Khachatryan VB, Roshchina NN, Andraca-Adame JA, Lytvyn OS, Kushnirenko VI (2007) Effect of doping on properties of ZnO:Cu and ZnO:Ag thin films. J Mater Sci Mater Electron 18:1115–1118.  https://doi.org/10.1007/s10854-007-9256-y CrossRefGoogle Scholar
  19. Kryshtab TG, Khomchenko VS, Andraca-Adame JA, Savin AK, Kryvko AV, Juarez G, Pena-Sierra R (2009) Luminescence and structure of ZnS–ZnO thin films prepared by oxidation of ZnS films in air and water vapor. J Lumin 129:1677–1681.  https://doi.org/10.1016/j.lumin.2009.04.069 CrossRefGoogle Scholar
  20. Lashkarev GV, Lazorenko VI, Evtushenko AI, Khranovskyy VD, Blonskyy LV, Dmitruk IM, Osmanov TS (2008) Effect of the deposition technology and structure of ZnO films on their photo- and cathodoluminescence. Ukr J Phys 53:867 – 872Google Scholar
  21. Lide DR (1994) CRC handbook of chemistry and physics. CRC Press Inc, LondonGoogle Scholar
  22. Lupan O, Pauporte T, Tiginyanu IM, Ursaki VV, Sontea V, Ono LK, Roldan Cuenya B, Chow L (2011) Comparative study of hydrothermal treatment and thermal annealing effects on properties of electrodeposited micro-columnar ZnO thin films. Thin Solid Films 519:7738–7749.  https://doi.org/10.1016/j.tsf.2011.05.072 CrossRefGoogle Scholar
  23. Marotti RE, Giorgi P, Machado G, Dalchiele EA (2006) Crystallite size dependence of band gap energy for electrodeposited ZnO grown at different temperatures. Solar Energy Mater Solar Cells 90:2356–2361.  https://doi.org/10.1016/j.solmat.2006.03.008 CrossRefGoogle Scholar
  24. Özgür Ü, Alivov YI, Liu C, Teke A, Reshchikov MA, Doğan S, Avrutin V, Cho S-J, Morkoç H (2005) A comprehensive review of ZnO materials and devices. J Appl Phys 98:041301-1–041301-103.  https://doi.org/10.1063/1.1992666 CrossRefGoogle Scholar
  25. Tari O, Aronne A, Addonizio ML, Daliento S, Fanelli E, Pernice P (2012) Sol–gel synthesis of ZnO transparent and conductive films: a critical approach. Sol Energy Mater Sol Cells 105:179–186.  https://doi.org/10.1016/j.solmat.2012.06.016 CrossRefGoogle Scholar
  26. Wahl U, Rita E, Correia JG, Agne T, Alves E, Soares JC (2006) Lattice sites of implanted Cu and Ag in ZnO. Superlattices Microstruct 39:229–237.  https://doi.org/10.1016/j.spmi.2005.08.065 CrossRefGoogle Scholar
  27. Wisz G, Virt I, Sagan P, Potera P, Yavorskyi R (2017) Structural, optical and electrical properties of zinc oxide layers produced by pulsed laser deposition method. Nanoscale Res Lett 12:253.  https://doi.org/10.1186/s11671-017-2033-9 CrossRefGoogle Scholar
  28. Xin H, Haolong Q, Qisen Z, Mei Z, Jianyi L, Ruihui H, Qingguang Z (2013) Investigation on the enhancement of ultraviolet emission in Ag–ZnO microrods. Appl Surf Sci 283:571–576.  https://doi.org/10.1016/j.apsusc.2013.06.147 CrossRefGoogle Scholar
  29. Yan Y, Al-Jassim MM, Wei SH (2006) Effects of the morphology of ZnO/Ag interface on the surface-plasmon enhanced emission of ZnO films. Appl Phys Lett 89:181912-1–18912-3.  https://doi.org/10.1063/1.2378404 Google Scholar
  30. You JB, Zhang XW, Fan YM, Yin ZG, Cai PF, Chen NF (2008) Effects of the morphology of ZnO/Ag interface on the surface-plasmon enhanced emission of ZnO films. J Phys D Appl Phys 41:205101.  https://doi.org/10.1088/0022-3727/41/20/205101 CrossRefGoogle Scholar
  31. Zhang SB, Wei SH, Zunger A (2001) Intrinsic n-type versus p-type doping asymmetry and the defect physics of ZnO. Phys Rev B 63:075205-1–07205-7Google Scholar
  32. Zhang Y, Zhang Z, Lin B, Fu Z, Xu J (2005) Effects of Ag doping on the photoluminescence of ZnO films grown on Si substrates. J Phys Chem B 109:19200–19203.  https://doi.org/10.1021/jp0538058 CrossRefGoogle Scholar

Copyright information

© Springer-Verlag GmbH Germany, part of Springer Nature 2018

Authors and Affiliations

  1. 1.V.Lashkarev Institute of Semiconductor PhysicsNational Academy of Science of UkraineKievUkraine
  2. 2.Borys Grinchenko Kyiv UniversityKievUkraine
  3. 3.Institute of PhysicsNational Academy of Science of UkraineKievUkraine
  4. 4.M. Frantsevich Institute for Problems of Materials SciencesNational Academy of Science of UkraineKievUkraine

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