Strilchuk, OM and Rudko, GYu and Gule, EG and Литвин, Оксана Степанівна and Maslov, VP and Liang, Baolai and Mazur, YuI (2025) Modification of the morphology and light-emitting properties of InGaAs/GaAs uncapped quantum dots by γ-irradiation IEEE Transactions on Nuclear Science. ISSN 1558-1578
Full text not available from this repository.Abstract
The influence of γ-irradiation on the morphology and light-emitting characteristics (intensity, peak position and half-width of photoluminescence bands) of uncapped InxGa1-xAs/GaAs quantum dots (QDs) grown on GaAs (100) substrates is studied. The radiation doses varied in the 1−103 kGy range. It is found that the average size of QDs increases and surface density of QDs decreases as the radiation dose rises. Irradiation with low doses of γ-quanta improves the luminescence intensity of the samples due to low-dose effect. Intensity increase at higher-dose irradiation is explained by enhanced transfer of carriers from wetting layer to QDs via radiation-induced defect levels. The spectral position of QDs luminescence band remains unaltered or weakly blue-shifts under irradiation which is explained by counter-play of two effects: growth of the average sizes of QDs and out-diffusion of indium from QDs.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | radiation effects; quantum dot lasers; photoluminescence; morphology; Indium gallium arsenide; surface morphology; quantum dots; protons; Gallium arsenide; fitting |
| Subjects: | Статті у базах даних > Scopus > У виданнях Q2 Scopus |
| Divisions: | Факультет інформаційних технологій та математики > Кафедра математики і фізики |
| Depositing User: | Оксана Степанівна Литвин |
| Date Deposited: | 11 Sep 2025 13:19 |
| Last Modified: | 11 Sep 2025 13:19 |
| URI: | https://elibrary.kubg.edu.ua/id/eprint/52955 |
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