Characterization of porous silicon carbide by absorption and photoluminescence

Березовская, Н.И. and Бачериков, Ю.Ю. and Конакова, Р.В. and Охрименко, О.Б. and Литвин, Оксана Степанівна and Линец, Л.Г. and Светличный, А.М. (2014) Characterization of porous silicon carbide by absorption and photoluminescence Физика и техника полупроводников, 48 (8). pp. 1055-1058. ISSN 0015-3222

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The paper presents the results of studies by atomic force microscopy, optical absorption spectroscopy and photoluminescence of porous silicon carbide, created by anodic etching. Analysis of the data indicates the absence of a porous layer of the cubic phase of SiC, and the appearance of photoluminescence por-SiC at excitation hνex ≤ Eg, due to the formation of centers of radiation which associated with impurity atoms and surface defects that occur during the anodic etching of the sample and subsequent treatment, revealing the pores.

Item Type: Article
Uncontrolled Keywords: porous silicon carbide; anodic etching; atomic force microscopy; photoluminescence
Subjects: Статті у журналах > Наукові (входять до інших наукометричних баз, крім перерахованих, мають ISSN, DOI, індекс цитування)
Divisions: Це архівні підрозділи > Кафедра інформатики
Depositing User: Оксана Степанівна Литвин
Date Deposited: 25 Feb 2015 08:21
Last Modified: 16 Apr 2018 11:01

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