Electroactivity of Al in Al-Doped ZnO Films

Ievtushenko, A.I. and Dranchuk, M.V. and Karpyna, V.A. and Литвин, Оксана Степанівна and Tkach, S.V. and Baturin, V.A. and Karpenko, O.Y. and Lashkarev, G.V. (2017) Electroactivity of Al in Al-Doped ZnO Films In: XVІ Міжнародна конференція з фізики і технології тонких плівок і наносистем, МКФТТПН-XVІ, м. Івано-Франківськ, Україна.

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Abstract

The report devoted to study the influence of Al content on its electroactivity in ZnO thin films. Al-doped ZnO thin films were deposited by growth method on silicon substrates. The set of ZnO:Al films with concentrations of Al in the range from 0.2 to 1.2 % were grown. For samples characterization, XRD, EDX analysis, atomic force microscopy and transmittance measurements were used. The temperature dependences of electrical resistivity and Hall coefficient were investigated.

Item Type: Conference or Workshop Item (Paper)
Uncontrolled Keywords: ZnO films; Al-doped; magnetron sputtering; Atomic force microscopy; XRD; EDX
Subjects: Наукові конференції > Міжнародні
Divisions: Факультети > Факультет інформаційних технологій та управління > Кафедра комп'ютерних наук і математики
Depositing User: Оксана Степанівна Литвин
Date Deposited: 25 Sep 2017 10:27
Last Modified: 16 Apr 2018 11:30
URI: http://elibrary.kubg.edu.ua/id/eprint/20208

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