Thin dysprosium oxide films formed by rapid thermal annealing on porous SiC substrates

Bacherikov, Yu.Yu and Konakova, R.V. and Okhrimenko, O.B. and Berezovska, N.I. and Lytvyn, O.S. and Kapitanchuk, L.M. and Svetlichnyi, A.M. (2018) Thin dysprosium oxide films formed by rapid thermal annealing on porous SiC substrates Semiconductor Physics, Quantum Electronics & Optoelectronics, 21 (4). pp. 360-364. ISSN 1560-8034

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Abstract

In this paper, we consider the effect of rapid thermal annealing (RTA) on the properties of Dy2O3 film formed on the surface of a substrate with a por-SiC/SiC structure. The atomic composition of the films under study was analyzed as a function of the RTA time. It is shown that the RTA method makes it possible to obtain thin Dy oxide films with a composition close to the stoichiometric one. In this case, an increase in the RTA time leads to improving the quality of film-substrate interface and increasing the optical transmission of Dy2O3/por-SiC/SiC structure

Item Type: Article
Uncontrolled Keywords: thin dysprosium oxide films; rapid thermal annealing; SiC substrates; interface; porous layer
Subjects: Статті у наукометричних базах > Web of Science
Divisions: Факультети > Факультет інформаційних технологій та управління > Кафедра комп'ютерних наук і математики
Depositing User: Оксана Степанівна Литвин
Date Deposited: 26 Feb 2019 11:57
Last Modified: 26 Feb 2019 11:57
URI: http://elibrary.kubg.edu.ua/id/eprint/26415

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