Optical properties of thin films GaSe/n-Si(111)

Киселюк, М.П. and Власенко, А.И. and Генцарь, П.А. and Вуйчик, Н.В. and Заяц, Н.С. and Кругленко , И.В. and Литвин, Оксана Степанівна and Криськов, Ц.А. (2010) Optical properties of thin films GaSe/n-Si(111) Физика и техника полупроводников, 44 (8). pp. 1046-1049. ISSN 0015-3222

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Abstract

GaSe thin films with thicknesses of 15 − 60 nm, grown on n-Si(111) single crystal substrates by the method of thermal deposition are investigated using the atomic force microscopy and the optical methods (ellipsometry, reflection spectra in the visible range 400 − 750 nm and in the infrared range 1.4 − 25 μm). It is determined that at the initial stage of film formation GaSe island (three-dimentional) growth on a n-Si(111) substrate occurs. It is shown the change of physical parameters of the thin films with thickness increase and approach of the thin films to GaSe single crystal as to the crystal structure and the energy band structure. For films 60 nm thick the maximum of the reflectance band is explained by indirect optical transitions strengthened by exciton interaction. In the optical research results an appearance of quantum effects in the near-surface region of the thin films is assumed.

Item Type: Article
Uncontrolled Keywords: GaSe thin films; ellipsometry; morphology; atomic force microscopy
Subjects: Articles in journals > Наукові (входять до інших наукометричних баз, крім перерахованих, мають ISSN, DOI, індекс цитування)
Divisions: Institutes > Institute of Society > Chair of Information Technologies and Mathematics > Chair of Computer Science
Depositing User: Оксана Степанівна Литвин
Date Deposited: 13 Jan 2014 11:08
Last Modified: 20 Nov 2015 10:21
URI: http://elibrary.kubg.edu.ua/id/eprint/3081

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