Fabrication and characterization of PbSe nanostructures on van der Waals surfaces of GaSe layered semiconductor crystals

Kudrynskyi, Z.R. and Bakhtinov, A.P. and Vodopyanov, V.M. and Kovalyuk, Z.D. and Tovarnitskii, M.V. and Литвин, Оксана Степанівна (2015) Fabrication and characterization of PbSe nanostructures on van der Waals surfaces of GaSe layered semiconductor crystals Nanotechnology, 26 (46). pp. 465601-1. ISSN 1361-6528

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The growth morphology, composition and structure of PbSe nanostructures grown on the atomically smooth, clean, nanoporous and oxidized van der Waals (0001) surfaces of GaSe layered crystals were studied by means of atomic force microscopy, x-ray diffractometry,photoelectron spectroscopy and Raman spectroscopy. Semiconductor heterostructures were grown by the hot-wall technique in vacuum. Nanoporous GaSe substrates were fabricated by the thermal annealing of layered crystals in a molecular hydrogen atmosphere. The irradiation of the GaSe(0001) surface by UV radiation was used to fabricate thin Ga2O3 layers with thickness < 2 nm. It was found that the narrow gap semiconductor PbSe shows a tendency to form clusters with a square or rectangular symmetry on the cleanlow-energy (0001) GaSe surface, and (001)-oriented growth of PbSe thin films takes place on this surface. Using this growth technique it is possible to grow PbSe nanostructures with different morphologies: continuous epitaxial layers with thickness < 10 nm on the uncontaminated p-GaSe(0001) surfaces, homogeneous arrays of quantum dots with a high lateral density (more than 1011 cm−2) on the oxidized van der Waals (0001) surfaces and faceted square pillar-like nanostructures with a low lateral density (∼108 cm−2) on the nanoporous GaSe substrates. We exploit the ‘vapor–liquid–solid’ growth with low-melting metal (Ga) catalyst of PbSe crystalline branched nanostructures via a surface-defect-assisted mechanism.

Item Type: Article
Additional Information: DOI 10.1088/0957-4484/26/46/465601
Uncontrolled Keywords: lead chalcogenidesж layered crystalsж quasi-van der Waals epitaxyж semiconductor heterostructures
Subjects: Статті у журналах > Наукові (входять до інших наукометричних баз, крім перерахованих, мають ISSN, DOI, індекс цитування)
Divisions: Це архівні підрозділи > Кафедра інформатики
Depositing User: Оксана Степанівна Литвин
Date Deposited: 23 Nov 2015 12:58
Last Modified: 11 Apr 2018 07:14
URI: https://elibrary.kubg.edu.ua/id/eprint/11037

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