Raman and Photoluminescence Study of Al,N‐Codoped ZnO Films Deposited at Oxygen‐Rich Conditions by Magnetron Sputtering

Karpyna, V.A. and Ievtushenko, A.I. and Kolomys, O.F. and Литвин, Оксана Степанівна and Strelchuk, V.V. and Tkach, V.M. and Starik, S. and Baturin, V.A. and Karpenko, O.Y. (2020) Raman and Photoluminescence Study of Al,N‐Codoped ZnO Films Deposited at Oxygen‐Rich Conditions by Magnetron Sputtering Physica Status Solidi B: Basic Solid State Physics, 257 (6). ISSN 1521-3951

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Abstract

Optical properties of as‐grown high nitrogen‐doped ZnO:Al,N films (with a variation of nitrogen concentration from 2.3 to 4.3 atomic %) are studied by Raman, photoluminescence, and Fourier‐transform infrared spectroscopy (FTIR). The intensity of mode A1LO, peaked at 580 cm−1, increases with increasing nitrogen concentration. The silent mode B1low at 275 cm−1 is clearly observed testifying increased disorder‐activated scattering in ZnO. Photoluminescence spectra reveal near‐band edge emission as well as several defect‐related bands, the intensity of which increases with nitrogen content. The blue band (2.61 eV) can be related to the transition from shallow donor level to deep nitrogen acceptor level. Also, incorporation of nitrogen in ZnO lattice causes appearance of both Zni and Oi defects responsible for violet (3.08 eV) and yellow (2.16 eV) emission band, respectively. At the same time near‐band edge emission of ZnO:Al,N films is not suppressed by simultaneously introduced Al and N impurities. Al compensates distortions in ZnO crystal lattice caused by nitrogen doping and, thus, stabilizes near‐band edge emission

Item Type:	Article
Uncontrolled Keywords:	ZnO films; Al-N cooping; Raman spectra; photoluminescence
Subjects:	Статті у наукометричних базах > Scopus Статті у наукометричних базах > Web of Science
Divisions:	Це архівні підрозділи > Кафедра комп'ютерних наук і математики
Depositing User:	Оксана Степанівна Литвин
Date Deposited:	18 Aug 2020 07:31
Last Modified:	18 Aug 2020 07:31
URI:	https://elibrary.kubg.edu.ua/id/eprint/31631

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