Low-temperature Raman studies of graphene oxide: Analysis of structural properties

Glamazda, A.Yu. and Linnik, A.S. and Литвин, Оксана Степанівна and Karachevtsev, V.A. (2024) Low-temperature Raman studies of graphene oxide: Analysis of structural properties AIP Advances, 14 (2). 025033-1-025033-7. ISSN 21583226

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Abstract

This work is devoted to the low-temperature Raman studies of a bright representative of 2D materials—graphene oxide (GO) film in the range of 5–325 K. The performed analysis of the temperature evolution of the peak positions as well as linewidths of two Raman modes D (∼1300 cm−1) and G (∼1600 cm−1) was described in terms of the anharmonic model. The temperature behavior of the G mode demonstrated a slight deviation from the anharmonic model below ∼50 K in contrast to the D mode, which could be explained by involving an additional phonon decay channel. The analysis of the linewidth of the Raman modes showed that the distribution of defects in GO is inhomogeneous and surface functionalization effectively separates neighboring layers. The average value of the distance between defects and the defect density was estimated. The obtained results can be useful for understanding phonon dynamics for the development of nanodevices based on 2D materials where confinement of propagation of phonon excitations plays a key role.

Item Type:	Article
Uncontrolled Keywords:	carbon low-dimensional materials; graphene oxide; low-temperature Raman study; Atomic-force microscopy
Subjects:	Статті у базах даних > Scopus Статті у базах даних > Web of Science
Divisions:	Факультет інформаційних технологій та математики > Кафедра математики і фізики
Depositing User:	Оксана Степанівна Литвин
Date Deposited:	02 Apr 2024 11:04
Last Modified:	02 Apr 2024 11:04
URI:	https://elibrary.kubg.edu.ua/id/eprint/48517

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