Ievtushenko, A.I. and Baibara, O. and Dranchuk, M.V. and Khyzhun, O. and Karpyna, V.A. and Bykov, O. and Литвин, Оксана Степанівна and Tkach, V.M. and Baturin, V.A. and Karpenko, O. (2022) Behavior of Al Impurity in ZnO Films: Influence of Al-Level Doping on Structure, X-Ray Photoelectron Spectroscopy and Transport Properties Physica Status Solidi (A). 2200523(1)-2200523(7). ISSN 1862-6319
Full text not available from this repository.Abstract
Transparent and conductive ZnO:Al thin films have been deposited by a reactive magnetron sputtering using the layer-by-layer growth method. The grown Al-doped ZnO films of about 100 nm thickness on Si and glass substrates, have been investigated with respect to the crystalline phase by X-ray diffraction (XRD), surface morphology by atomic force microscopy (AFM), chemical bonding and the electronic structure by measuring the XPS core-level and valence-band spectra of the ZnO:Al films. Influence of Al content in ZnO films on structure, optical and XPS spectra, transport parameters n, µ, ρ have been studied. The weak temperature dependence of conductivity in temperature range 77-300 K suggest that Al3+ is fully ionized impurity that provides the values of electron concentration in the range 7×1019 – 2.44×1020 cm-3. Al electroactivity in ZnO films is diminishing with Al content increases. The strong decrease in Al electroactivity from 60 % to 30 % is observed for ZnO:Al films within 0.93 - 1.22 at. % of Al that indicates on enhancement of concentration of acceptor native and/or neutral complex defects in ZnO.
| Item Type: | Article |
|---|---|
| Additional Information: | https://doi.org/10.1002/pssa.202200523 |
| Uncontrolled Keywords: | thin films; ZnO:Al; X-ray diffraction; atomic force microscopy; X-ray photoelectron spectroscopy |
| Subjects: | Це архівна тематика Київського університету імені Бориса Грінченка > Статті у наукометричних базах > Scopus Це архівна тематика Київського університету імені Бориса Грінченка > Статті у наукометричних базах > Web of Science |
| Divisions: | Це архівні підрозділи Київського університету імені Бориса Грінченка > Факультет інформаційних технологій та математики > Кафедра математики і фізики |
| Depositing User: | Оксана Степанівна Литвин |
| Date Deposited: | 27 Dec 2022 12:43 |
| Last Modified: | 02 Jan 2023 18:34 |
| URI: | https://elibrary.kubg.edu.ua/id/eprint/42597 |
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